Semiconductor Electronics : Materials, Devices And Simple Circuits

What is the output Y in the following circuit, when all the three inputs A, B, C are first 0 and then 1?

To get output 1 for the following circuit, the correct choice for the input is:

The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance R₁ will be:

Consider the junction diode as ideal. The value of current flowing through AB is (refer to the given circuit):

The given electrical network (with inputs A, B and output Y) is equivalent to:

Which one of the following represents a forward biased diode?

In a p-n junction diode, change in temperature due to heating:

In the combination of the following gates, the output Y can be written in terms of inputs A and B as:

For a p-type semiconductor, which of the following statements is true?

The circuit diagram shown here corresponds to the logic gate:

An LED is constructed from a p-n junction diode using GaAsP. The energy gap is 1.9 eV. The wavelength of the light emitted will be equal to:

The correct Boolean operation represented by the circuit diagram drawn (an LED Y driven from +6 V through resistor R with inputs A and B) is:

The solids which have the negative temperature coefficient of resistance are:

The increase in the width of the depletion region in a p-n junction diode is due to:

For the given circuit, the input digital signals are applied at the terminals A, B and C. What would be the output waveform at the terminal Y?

Consider the following Statements (A) and (B) and identify the correct answer. A. A zener diode is connected in reverse bias when used as a voltage regulator. B. The potential barrier of a p-n junction lies between 0.1 V to 0.3 V.

The electron concentration in an n-type semiconductor is the same as the hole concentration in a p-type semiconductor. An external electric field is applied across each of them. Compare the currents in them.

As the temperature increases, the electrical resistance:

The truth table for the given logic circuit is:

In half wave rectification, if the input frequency is 60 Hz, then the output frequency would be:

On the basis of electrical conductivity, which one of the following materials has the smallest resistivity?

For the following logic circuit, the truth table is:

A full wave rectifier circuit consists of two p-n junction diodes, a centre-tapped transformer, capacitor and a load resistance. Which of these components removes the ac ripple from the rectified output?

A p-type extrinsic semiconductor is obtained when Germanium is doped with:

Given below are two statements: Statement I: Photovoltaic devices can convert optical radiation into electricity. Statement II: Zener diode is designed to operate under reverse bias in breakdown region. In the light of the above statements, choose the most appropriate answer from the options given below:

The given circuit is equivalent to a single:

A logic circuit provides the output Y as per the following truth table: A B Y 0 0 1 0 1 0 1 0 1 1 1 0 The expression for the output Y is:

Consider the following statements A and B and identify the correct answer: A. For a solar cell, the I-V characteristic lies in the IV (fourth) quadrant of the given graph. B. In a reverse biased p-n junction diode, the current measured in μA is due to majority charge carriers.

The output (Y) of the given logic gate is similar to the output of an/a:

A full wave rectifier circuit with diodes D₁ and D₂ is shown in the figure. If the input supply voltage is V_in = 220 sin(100πt) volt, then at t = 15 ms:

The output (Y) of the given logic implementation is similar to the output of an/a ____ gate.

Two statements are given below: A. When the forward bias voltage across a p-n junction diode increases above a certain threshold voltage, the diode current increases significantly. B. This current is called reverse saturation current. Choose the correct answer from the options given below:

Three identical p-n junction diodes $D_1$, $D_2$ and $D_3$ are connected across a battery as shown (each in series with a $1\,$k$\Omega$ resistor). If the widths of the depletion regions of $D_1$, $D_2$, $D_3$ are $W_1$, $W_2$, $W_3$ respectively, then the correct option is:

In the circuit shown below (an a.c. source in series with a diode D and a resistor R), the voltage appearing across the diode D will be of the form:

An ideal Zener diode with breakdown voltage of $-3\,$V is reverse biased with a negative input voltage $V_i=-5\,$V. In the circuit shown ($C$–[Zener]–$B$–$R$–$A$), the magnitude of the voltage difference between points $B$ and $A$ is:

The current I in the circuit shown below is: (All diodes are ideal and identical)